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Title page for ETD etd-12212012-123125

Type of Document Dissertation
Author Rezzak, Nadia
Author's Email Address rezzak.nadia@gmail.com
URN etd-12212012-123125
Title Total ionizing dose effects in advanced CMOS technologies
Degree PhD
Department Electrical Engineering
Advisory Committee
Advisor Name Title
Professor Daniel M. Fleetwood Committee Member
Professor Michael L. Alles Committee Member
Professor Robert A. Reed Committee Member
Professor Ronald D. Schrimpf Committee Member
Professor Sokrates T. Pantelides Committee Member
  • Fully depleted SOI
  • Partially depleted SOI
  • Variability
  • total ionizing dose (TID)
  • sidewall doping
  • shallow trench isolation (STI)
  • MOSFET off-state leakage current
  • mechanical stress
  • Active space distance
Date of Defense 2012-10-16
Availability unrestricted
Key aspects of the total-ionizing dose (TID) response of advanced complementary metal–oxide–semiconductor (CMOS) technologies are examined. As technology scales down, stress can strongly affect radiation-induced leakage currents in ways that are difficult to predict in advance of detailed characterization and modeling of the responses of devices across a range of representative geometries. Quantifying the variability and the dependence on design parameters is essential to determine the significance of variability in the circuit design and lot-acceptance processes. Doping generally increases as devices become smaller for planar CMOS devices therefore technology scaling trends for TID appear to be favorable going forward, at least until device dimensions become so small that random dopant fluctuation begin to dominate the variability in response. The high body doping in partially depleted silicon on insulator (SOI) devices results in TID insensitivity, however doping in other advanced CMOS devices such as fully depleted SOI and FinFETs will play a role in the TID sensitivity, particularly in cases where lightly-doped regions are used.
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