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Title page for ETD etd-12212010-151102

Type of Document Master's Thesis
Author Zhang, Xuan (Cher)
Author's Email Address xuan.zhang@vanderbilt.edu
URN etd-12212010-151102
Title Total ionizing dose radiation effects on germanium pMOS devices.
Degree Master of Science
Department Electrical Engineering
Advisory Committee
Advisor Name Title
Dan Fleetwood Committee Member
Ron Schrimpf Committee Member
  • total ionizing dose
  • germanium
Date of Defense 2010-12-14
Availability unrestricted
Radiation effects on Ge pMOS devices have been presented in this thesis. The irradiation and annealing responses of Ge pMOSFETs are investigated as a function of device processing. Transmission gate bias is found to be the worst-case irradiation bias condition. Junction leakage increases with total dose, which leads to a decrease in the ION/IOFF ratio. The ION/IOFF ratio recovers with room temperature annealing. Both band-to-band tunneling and trap-assisted tunneling contribute to the observed leakage. Device leakage before and after irradiation is found to be sensitive to halo implant dose and the number of Si monolayers at the Ge/insulator interface. Interface trap densities and body leakage also increase with dose and decrease with annealing. Both the radiation-induced charge trapping and the low frequency (1/f) noise increase with total ionizing dose and decrease with annealing time. The smallest increases in noise after irradiation are observed for Ge pMOSFETs with the lowest halo implantation doses. The smallest increases in oxide and interface trap charge densities are obtained for devices with eight monolayers of Si at the interface, as compared to devices with five Si monolayers.
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