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Title page for ETD etd-12192006-190448

Type of Document Master's Thesis
Author Ramachandran, Vishwanath
Author's Email Address vishwa.ramachandran@vanderbilt.edu
URN etd-12192006-190448
Title Analysis of Total-Dose Effects for a Low-Dropout Voltage Regulator
Degree Master of Science
Department Electrical Engineering
Advisory Committee
Advisor Name Title
Daniel M. Fleetwood Committee Member
Ronald D. Schrimpf Committee Member
  • voltage regulator
  • enhanced low-dose-rate sensitivity
  • radiation-induced leakage
  • IC radiation response
  • linear bipolar ICs
  • modeling and simulation
  • Integrated circuits--Effect of radiation on
Date of Defense 2006-11-06
Availability unrestricted
Total ionizing dose effects in a low-dropout

voltage regulator are explained based on experimental data and circuit simulations. Transistor gain degradation is shown to be the dominant cause of the circuit degradation at lower dose rates. In addition, collector-to-emitter

leakage current in one of the NPN transistors of

the bandgap reference part of the circuit is responsible for increasing the postirradiation output voltage at high dose rates. Parametric changes in the bandgap, differential amplifier, and output pass transistor circuit blocks are

identified that are responsible for various aspects of the observed circuit degradation. The different annealing characteristics of oxide-trap and interface-trap charge are responsible for the complex postirradiation recovery of the

output voltage.

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