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Title page for ETD etd-12032003-100902

Type of Document Dissertation
Author Pagey, Manish Prabhakar
URN etd-12032003-100902
Title Hot-Carrier Reliability Simulation in Aggressively Scaled MOS Transistors
Degree PhD
Department Electrical Engineering
Advisory Committee
Advisor Name Title
Dr. Ronald D. Schrimpf Committee Chair
Dr. Kenneth F. Galloway Committee Co-Chair
Dr. Lloyd W. Massengill Committee Member
Dr. Robert A. Weller Committee Member
Dr. Sokrates T. Pantelides Committee Member
  • modeling
  • semiconductor
  • reliability
  • hot-carrier
Date of Defense 2003-08-22
Availability unrestricted
Hot-carrier-induced degradation is a significant reliability concern

in aggressively scaled metal-oxide-semiconductor~(MOS) transistors.

The physical mechanisms responsible for hot-carrier degradation have

been studied over the past several decades in order to devise methods

to mitigate their detrimental effects. Several empirical and

semi-empirical models have been popularly used in the industry to

estimate the hot-carrier lifetimes of devices produced using specific

semiconductor technologies. However, such methods use several

simplifying assumptions that are not applicable to ultra-small

geometry MOS devices. Furthermore, such models are not capable of

predicting hot-carrier reliability variation with technology

modifications. Such capabilities are essential for optimizing a

technology to meet performance as well as reliability goals. In this

dissertation, we have developed a hot-carrier modeling approach that

avoids the assumptions made by traditional hot-carrier modeling

techniques. Physical models for mechanisms that are significant in

aggressively scaled device geometries have been included. In

particular, models for carrier transport and heating in the

semiconductor and injection into the insulator layers have been

carefully selected for application to short-channel devices. A

comprehensive model for the transport of injected carriers in the

oxide and their interactions with defects in the oxide and at the

oxide-semiconductor interface has been developed. The effects of

long-term carrier trapping and interface trap generation due to

hot-carrier injection have been simulated using this approach in a set

of commercial and non-commercial technologies. The framework presented

here represents an essential component of the technological design

process for assuring hot-carrier reliability in current and future


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