A joint project of the Graduate School, Peabody College, and the Jean & Alexander Heard Library

Title page for ETD etd-11182016-085816


Type of Document Master's Thesis
Author Moktader, Arif
Author's Email Address arifmoktader@gmail.com
URN etd-11182016-085816
Title Single-Event Characterization of Flip-Flops after Total Ionizing Dose Exposures for a 20-nm Bulk, Planar Technology
Degree Master of Science
Department Electrical Engineering
Advisory Committee
Advisor Name Title
Bharat Bhuva Committee Member
Enxia Zhang Committee Member
Keywords
  • space
  • FF
  • TID
  • upset
  • radiation
Date of Defense 2016-08-19
Availability unrestricted
Abstract
This paper looks at single-event upset characterization of flip flops across total ionizing dose (TID) exposures and annealing current for a 20-nm bulk, planar, CMOS technology. 20-nm chips were irradiated to five different TID levels using an x-ray radiation source, and alpha particle tests were conducted using a Polonium-210 source during and after an annealing period. Impacts on single event upsets and ring oscillator frequency are studied.
Files
  Filename       Size       Approximate Download Time (Hours:Minutes:Seconds) 
 
 28.8 Modem   56K Modem   ISDN (64 Kb)   ISDN (128 Kb)   Higher-speed Access 
  Moktader.pdf 1.82 Mb 00:08:24 00:04:19 00:03:46 00:01:53 00:00:09

Browse All Available ETDs by ( Author | Department )

If you have more questions or technical problems, please Contact LITS.