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Title page for ETD etd-11182016-085816

Type of Document Master's Thesis
Author Moktader, Arif
Author's Email Address arifmoktader@gmail.com
URN etd-11182016-085816
Title Single-Event Characterization of Flip-Flops after Total Ionizing Dose Exposures for a 20-nm Bulk, Planar Technology
Degree Master of Science
Department Electrical Engineering
Advisory Committee
Advisor Name Title
Bharat Bhuva Committee Member
Enxia Zhang Committee Member
  • space
  • FF
  • TID
  • upset
  • radiation
Date of Defense 2016-08-19
Availability unrestricted
This paper looks at single-event upset characterization of flip flops across total ionizing dose (TID) exposures and annealing current for a 20-nm bulk, planar, CMOS technology. 20-nm chips were irradiated to five different TID levels using an x-ray radiation source, and alpha particle tests were conducted using a Polonium-210 source during and after an annealing period. Impacts on single event upsets and ring oscillator frequency are studied.
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