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Title page for ETD etd-11132008-162941

Type of Document Dissertation
Author Tipton, Alan Douglas
Author's Email Address alan.tipton@gmail.com
URN etd-11132008-162941
Title On the Impact of Device Orientation on the Multiple Cell Upset Radiation Response in Nanoscale Integrated Circuits
Degree PhD
Department Electrical Engineering
Advisory Committee
Advisor Name Title
Ronald D. Schrimpf Committee Chair
Kalman Varga Committee Member
Lloyd W. Massengill Committee Member
Robert A. Reed Committee Member
Robert A. Weller Committee Member
  • SRAM
  • radiation effects
  • multiple cell upset
  • multiple bit upset
  • Heavy ions
  • Integrated circuits -- Effect of radiation on
  • softer errors
  • Neutrons
  • Radiation hardening
Date of Defense 2008-10-30
Availability unrestricted
Soft errors in integrated circuits (ICs) are a critical problem facing state-of-the-art technologies. In both the terrestrial and space environment, the source of soft errors is charged particle interaction with ICs. This work examines the effects of multiple soft errors from a single particle interaction. In memory devices, clusters of physically adjacent soft errors are referred to as multiple cell upsets (MCUs). In this work, the impact of device orientation on the MCU response from accelerated heavy ion and neutron testing is analyzed. The size, shape, and probability of MCU are shown to depend on orientation for both particle types. The worst case MCU events occur at large angles of incidence. Additionally, heavy ions also exhibit a strong dependence on the ion's trajectory with respect to the SRAM layout for the size and shape of MCU events.

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