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Title page for ETD etd-07212016-224032

Type of Document Dissertation
Author Duan, Guoxing
Author's Email Address duanguoxing@gmail.com
URN etd-07212016-224032
Title Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices
Degree PhD
Department Electrical Engineering
Advisory Committee
Advisor Name Title
Daniel M. Fleetwood Committee Chair
Enxia Zhang Committee Member
Robert A. Reed Committee Member
Ronald D. Schrimpf Committee Member
Sokrates T. Pantelides Committee Member
  • HfO2
  • SiGe
  • low frequency noise
  • NBTI
  • TID
Date of Defense 2015-12-17
Availability unrestricted
The total ionizing dose (TID) response of HfO2-SiO2/SiGe pMOS FinFETs under different irradiation biases has been evaluated. Negative bias irradiation leads to the worst-case degradation. We attribute this result to an increase in density of additional radiation-induced holes that become trapped in the HfO2 under negative bias, and additional electron trapping under positive bias in the HfO2, as compared with the 0 V irradiation case. When devices are exposed to negative bias-temperature stress, we find similar values of Ea for oxide-trap charge buildup, and a reduced Ea for interface-trap buildup, for Si0.55Ge0.45 pMOSFETs with high-k gate stacks, compared to control Si devices with SiO2 gate dielectrics. The low-frequency 1/f noise of these devices was also investigated. The magnitude of noise is unaffected by negative-bias-temperature stress (NBTS) for temperatures below ~ 250 K, but increases significantly at higher temperatures. The noise is described well by the Dutta-Horn model before and after NBTS. The noise is attributed to oxygen-vacancy and hydrogen-related defects in the SiO2 and HfO2 (especially at the higher measuring temperatures) and/or hydrogen-dopant interactions in the SiGe layer of the device (especially for lower measuring temperature).
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