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Title page for ETD etd-07182019-231235


Type of Document Master's Thesis
Author Poe, Grant Douglas
Author's Email Address Grant.d.Poe@vanderbilt.edu
URN etd-07182019-231235
Title A RADIATION-TOLERANT D FLIP-FLOP DESIGNED FOR LOW-VOLTAGE APPLICATIONS
Degree Master of Science
Department Electrical Engineering
Advisory Committee
Advisor Name Title
Jeffrey S. Kauppila Committee Member
Lloyd W. Massengill Committee Member
Keywords
  • D Flip-Flop
  • Single-Event Upset
  • Radiation Hardened By Design
Date of Defense 2019-07-17
Availability unrestricted
Abstract
A radiation-hardened by design (RHBD) D flip-flop is presented that demonstrates a tolerance to radiation induced single-event upsets while maintaining desirable electrical performance characteristics over a wide range of supply voltages. The flip-flop is based on the unhardened Static Single-phased Contention Free Flip-Flop and maintains three characteristics of being static, single-phased, and contention free for robustness against Process/Voltage/Temperature variations in low voltage operation. The radiation robustness and electrical performance of the new RHBD D flip-flop design is then compared to the unhardened S2CFF, and a fully hardened DICE flip-flop design. These results demonstrate that this new flip-flop design has significant performance advantages over the DICE flip-flop and is much more hardened to radiation when compared to conventional flip-flop designs.
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