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Title page for ETD etd-07102008-091533

Type of Document Dissertation
Author Lu, Xiong
URN etd-07102008-091533
Title Studies of Si/SiO2 heterostructures using second harmonic generation
Degree PhD
Department Physics
Advisory Committee
Advisor Name Title
Norman H. Tolk Committee Chair
Jimmy L. Davidson Committee Member
Ronald D. Schrimpf Committee Member
Royal Albridge Committee Member
Sait Umar Committee Member
  • si/sio2
  • second harmonic generation
  • nonlinear susceptibility
  • semiconductor
  • SOI
Date of Defense 2008-06-12
Availability unrestricted
In this thesis, we report our work on temperature dependence of second harmonic generation in Si/SiO2, which has led to an enhanced understanding of the physical processes associated with creation of the photo-induced electric field. The experimental data showed that the second- and third-order nonlinear susceptibilities increased with temperature. The data also showed that the number of filled electron trap states at the oxide surface, which is the origin of the photo-induced electric field, doesn’t change with temperature. Moreover, the temperature dependence of the trapping rate is a combination effect of electron-phonon scattering, and of the temperature dependence of the Si absorption coefficient and the SiO2 dielectric constant. We also report our recent SHG studies of silicon-on-Insulator (SOI) wafers and Si/SiO2/MgO structures, which show that the SHG is a very sensitive tool to monitor properties of the multi-layer structures.

In summary, we demonstrate that second harmonic generation is an effective, nondestructive technique for characterization of thin oxide and multi-interface structures.

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