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Title page for ETD etd-04122018-185733


Type of Document Dissertation
Author Trippe, James Michael
Author's Email Address james.m.trippe@vanderbilt.edu
URN etd-04122018-185733
Title Monte Carlo methods for predicting SRAM vulnerability to muon and electron induced single event upsets
Degree PhD
Department Electrical Engineering
Advisory Committee
Advisor Name Title
Robert A. Reed Committee Chair
Brian D. Sierawski Committee Member
Robert A. Weller Committee Member
Ronald D. Schrimpf Committee Member
Sokrates T. Pantelides Committee Member
Keywords
  • Monte Carlo
  • Single Event Upset
  • Ion Beam
  • SRAM
Date of Defense 2018-04-06
Availability unrestricted
Abstract
Stopping muons and electrons have been shown in previous work to be capable of inducing single event upsets (SEUs) in modern SRAM technologies. In order to determine when electron and muon SEU testing for a given device are required, methods developed in this work provide an alternative capable of assessing the vulnerability of devices to SEUs induced by these particles. Ion test data from more commonly available ion beams are used to parameterize a multiple sensitive volume model for use with a Monte Carlo transport tool. This approach is validated for a 28 nm SRAM by comparing simulation results to ion test data taken at various facilities. Models developed for this SRAM accurately reproduce its proton, muon, and electron experimental SEU cross-sections. Rate predictions for various relevant environments are also performed.
Files
  Filename       Size       Approximate Download Time (Hours:Minutes:Seconds) 
 
 28.8 Modem   56K Modem   ISDN (64 Kb)   ISDN (128 Kb)   Higher-speed Access 
  Trippe.pdf 4.23 Mb 00:19:35 00:10:04 00:08:49 00:04:24 00:00:22

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