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Title page for ETD etd-04012012-154436

Type of Document Dissertation
Author Ahlbin, Jonathan Ragnar
Author's Email Address jon.ahlbin@vanderbilt.edu
URN etd-04012012-154436
Title Characterization of the mechanisms affecting single-event transients in sub-100 nm technologies
Degree PhD
Department Electrical Engineering
Advisory Committee
Advisor Name Title
Prof. Lloyd Massengill Committee Chair
Dr. Stephen Buchner Committee Member
Prof. Arthur Witulski Committee Member
Prof. Bharat Bhuva Committee Member
Prof. Robert Reed Committee Member
  • pulse quenching
  • semiconductor reliability
  • radiation effects
  • single-event
  • single-event transient
  • digital circuit
  • charge sharing
  • CMOS reliability
Date of Defense 2012-02-24
Availability unrestricted
As transistor density increases with each new CMOS technology node, the probability of a single ion causing a single-event transient in a circuit or inducing charge sharing among transistors increases. These transients can lead to single-event upsets that can cause a circuit or system to fail. Therefore, it is important to understand the characteristics of single-event transients at each new technology node and the resulting impacts on circuit designs.

This dissertation uses both three-dimensional mixed-mode technology-computer-aided design simulations and experimental analysis at the 65 nm, 90 nm, and 130 nm technology nodes to fully characterize the mechanisms that affect single-event transients in sub-100 nm bulk CMOS technologies. Investigations show that the design parameter of n-well contact area influences the pulse width of single-event transients by controlling the degree of parasitic bipolar junction transistor amplification in pMOS transistors. Also the prevalence of charge sharing in sub-100 nm bulk CMO technologies has led to a new single-event mechanism called pulse quenching that can shorten or eliminate single-event transients. Furthermore, pulse quenching can lead to a new type of single-event transient called a double-pulse-single-event transient.

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