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Title page for ETD etd-03272003-122718

Type of Document Master's Thesis
Author Ralston-Good, Jeremy
URN etd-03272003-122718
Title Analysis of Schottky diode failure mechanisms during exposure to electron beam pulse using TCAD simlulation
Degree Master of Engineering
Department Electrical Engineering
Advisory Committee
Advisor Name Title
Dr. Ronald Schrimpf Committee Chair
Dr. Greg Walker Committee Member
  • Schottky Diodes
Date of Defense 2002-12-16
Availability unrestricted
Numerical process and device simulation tools are used in this work to analyze the physical mechanisms that contribute to catastrophic failure of power Schottky diodes exposed to an electron beam pulse. Simulations suggest that the diodes fail at the guard ring edge due to depletion region collapse that effectively shorts the guard ring to the substrate, leading to high current densities and thermal runaway. Numerical simulations are also used to examine techniques to increase survivability.
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