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Title page for ETD etd-03252014-171550

Type of Document Master's Thesis
Author Duan, Guoxing
Author's Email Address guoxing.duan@vanderbilt.edu
URN etd-03252014-171550
Title Total ionizing dose radiation effects and negative bias temperature instability on SiGe pMOS devices
Degree Master of Science
Department Electrical Engineering
Advisory Committee
Advisor Name Title
Daniel M. Fleetwood Committee Member
Ronald D. Schrimpf Committee Member
  • interface traps
  • HfO2
  • SiGe
  • NBTI
  • TID
  • oxide-trap charge
Date of Defense 2014-03-19
Availability unrestricted
The total ionizing dose (TID) response of HfO2-SiO2/SiGe pMOS FinFETs under different irradiation biases have been evaluated. Negative bias irradiation leads to the worst-case degradation in TID response. This is attributed to the additional contributions of radiation-induced holes generated in the SiO2 interfacial layer of the bilayer insulating structure that, under negative bias, transport into and become trapped in the HfO2. This leads to a more negative threshold voltage shift compared to 0 V irradiation. During positive bias irradiation, a similar number of radiation-induced electrons are generated in the SiO2. These can similarly transport into and become trapped in the HfO2, leading to a less negative threshold voltage shift than during 0 V irradiation. Interface- and oxide-trap charge buildup during negative bias-temperature stress of SiGe0.45 pMOSFETs is also investigated. The activation energies (Ea) of the effective interface-trap and oxide-trap charge densities in SiGe0.45 pMOSFETs with SiO2/HfO2 gate dielectric stacks are compared with those of Si FinFETs with SiO2 gate dielectrics. We find similar values of Ea for oxide-trap charge buildup for the two device types, and a reduced Ea for interface-trap buildup for the SiGe0.45 pMOSFETs with high-k gate stacks, compared to the Si FinFETs with SiO2 gate dielectrics.
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