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Title page for ETD etd-02222005-122500

Type of Document Dissertation
Author Dhar, Sarit
Author's Email Address sarit.dhar@vanderbilt.edu
URN etd-02222005-122500
Title Nitrogen and hydrogen induced trap passivation at the SiO2/4H-SiC interface
Degree PhD
Department Materials Science and Engineering
Advisory Committee
Advisor Name Title
Leonard C. Feldman Committee Chair
Bridget R. ROgers Committee Member
Daniel M. Fleetwood Committee Member
John R. Williams Committee Member
Sokrates T. Pantelides Committee Member
  • interface states
  • interface passivation
  • channel mobility
  • metal-oxide-semiconductor field effect transistor
  • crystal face
  • oxidation
  • nitridation
  • silicon dioxide
  • silicon carbide
Date of Defense 2005-02-10
Availability unrestricted
Silicon Carbide (SiC) is a wide band-gap semiconductor that is receiving much attention for electronic applications in high temperature and high power environments. Operation under these extreme conditions has motivated the development of SiC metal-oxide-field-effect-transistors (MOSFETs) for efficient power switching applications. In any MOS system, the quality of the interface between the oxide and the semiconductor has a great impact on the performance of the device. Although SiC can be thermally oxidized to silicon dioxide (SiO2) as in the case of Si; one of the major obstacles for SiC MOSFET development has been the inferior quality of the SiO2/SiC interface. This dissertation focuses on the development and characterization of interface modification processes that passivate interface defects and improve the quality of this interface.

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