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Title page for ETD etd-02012013-134911

Type of Document Dissertation
Author Ramachandran, Vishwanath
URN etd-02012013-134911
Title Single-Event Mechanisms in InAlSb/InAs/AlGaSb High Electron Mobility Transistors
Degree PhD
Department Electrical Engineering
Advisory Committee
Advisor Name Title
Robert A. Reed Committee Chair
Arthur F. Witulski Committee Member
D. Greg Walker Committee Member
Michael L. Alles Committee Member
Ronald D. Schrimpf Committee Member
  • High Electron Mobility Transistor
  • HEMT
  • single-event effects
  • radiation effects
  • III-V
  • compound semiconductor
Date of Defense 2013-01-30
Availability unrestricted
Single-event mechanisms in InAlSb/InAs/AlGaSb high electron mobility transistors (HEMTs) are identified and investigated. Single-event transients are characterized using broadbeam and microbeam experiments along with 2-D technology computer-aided design (TCAD) modeling. The experiments show that single-event transients can be generated not only in the channel region but also across the drain-source alloy and buffer interface. The prevalence of strong single-event transient sensitivity to gate bias is demonstrated through broadbeam experiments, where the integrated charge peaks at threshold bias and drops off at both depletion and accumulation biases. A type-II band alignment in the InAlSb/InAs/AlGaSb HEMT modulating charge transport and electric field in the channel is shown to be responsible for the observed single-event transient sensitivity to gate bias. The effects of processing-induced device threshold voltage variations on the corresponding single-event response are studied through 2-D TCAD modeling.
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