Type of Document	PHD
Author	Milanowski, Randall James
Author's Email Address	rjm@drcsdca.com
URN	etd-122299-104613
Title	Transient Simulation of Radiation-Induced Charge Trapping and Interface Trap Formation Using a Physically-Based, Three-Carrier Transport Model in Silicon Dioxide
Degree	PhD
Department	Electrical Engineering
Advisory Committee	Advisor Name Title Lloyd Massengill Committee Chair Bob Weller Committee Member Ken Galloway Committee Member Ron Schrimpf Committee Member Sokrates Pantelides Committee Member
Keywords	interface trap radiation effects tcad dispersive transport hydrogen ctrw
Date of Defense	2002-12-16
Availability	unrestricted
Abstract Ionizing radiation poses a serious threat to semiconductor integrated circuits that are required to operate reliably in radiation-intensive environments, for example, circuits used in space electronics. Numerical modeling of radiation-induced defect formation in the Si-SiO2 system is finding increasing application in the design of radiation-resistant electronics. To date, several numerical hole-trapping simulators have been developed and applied to radiation-induced leakage problems. However, few attempts have been made to model the kinetics of interface trap formation. This dissertation presents a novel solution to this problem, specifically, a coupled model for electron, hole, and proton transport in Silicon Dioxide suitable for transient device simulation-based prediction of the buildup of both major types radiation-induced defects: trapped oxide charge and interface traps. This model provides two fundamental “firsts” in physically-based radiation effects simulation: (1) the representation of hole-trapping-induced proton release in a self-consistent system of electron, hole, and proton continuity equations, and (2) the application of a continuity equation-based model for dispersive proton transport. Essential features of hydrogen-mediated interface trap formation are demonstrated in a series of pulsed exposure/switched bias simulations.
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