Type of Document PHD Author Milanowski, Randall James Author's Email Address email@example.com URN etd-122299-104613 Title Transient Simulation of Radiation-Induced Charge Trapping and Interface Trap Formation Using a Physically-Based, Three-Carrier Transport Model in Silicon Dioxide Degree PhD Department Electrical Engineering Advisory Committee
Advisor Name Title Lloyd Massengill Committee Chair Bob Weller Committee Member Ken Galloway Committee Member Ron Schrimpf Committee Member Sokrates Pantelides Committee Member Keywords
- interface trap
- radiation effects
- dispersive transport
Date of Defense 2002-12-16 Availability unrestricted AbstractIonizing radiation poses a serious threat to semiconductor integrated circuits that are required to
operate reliably in radiation-intensive environments, for example, circuits used in space electronics.
Numerical modeling of radiation-induced defect formation in the Si-SiO2 system is finding
increasing application in the design of radiation-resistant electronics. To date, several numerical
hole-trapping simulators have been developed and applied to radiation-induced leakage problems.
However, few attempts have been made to model the kinetics of interface trap formation. This dissertation
presents a novel solution to this problem, specifically, a coupled model for electron, hole,
and proton transport in Silicon Dioxide suitable for transient device simulation-based prediction
of the buildup of both major types radiation-induced defects: trapped oxide charge and interface
traps. This model provides two fundamental “firsts” in physically-based radiation effects simulation:
(1) the representation of hole-trapping-induced proton release in a self-consistent system of
electron, hole, and proton continuity equations, and (2) the application of a continuity equation-based
model for dispersive proton transport. Essential features of hydrogen-mediated interface trap
formation are demonstrated in a series of pulsed exposure/switched bias simulations.
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