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Title page for ETD etd-122299-104613


Type of Document PHD
Author Milanowski, Randall James
Author's Email Address rjm@drcsdca.com
URN etd-122299-104613
Title Transient Simulation of Radiation-Induced Charge Trapping and Interface Trap Formation Using a Physically-Based, Three-Carrier Transport Model in Silicon Dioxide
Degree PhD
Department Electrical Engineering
Advisory Committee
Advisor Name Title
Lloyd Massengill Committee Chair
Bob Weller Committee Member
Ken Galloway Committee Member
Ron Schrimpf Committee Member
Sokrates Pantelides Committee Member
Keywords
  • interface trap
  • radiation effects
  • tcad
  • dispersive transport
  • hydrogen
  • ctrw
Date of Defense 2002-12-16
Availability unrestricted
Abstract
Ionizing radiation poses a serious threat to semiconductor integrated circuits that are required to

operate reliably in radiation-intensive environments, for example, circuits used in space electronics.

Numerical modeling of radiation-induced defect formation in the Si-SiO2 system is finding

increasing application in the design of radiation-resistant electronics. To date, several numerical

hole-trapping simulators have been developed and applied to radiation-induced leakage problems.

However, few attempts have been made to model the kinetics of interface trap formation. This dissertation

presents a novel solution to this problem, specifically, a coupled model for electron, hole,

and proton transport in Silicon Dioxide suitable for transient device simulation-based prediction

of the buildup of both major types radiation-induced defects: trapped oxide charge and interface

traps. This model provides two fundamental “firsts” in physically-based radiation effects simulation:

(1) the representation of hole-trapping-induced proton release in a self-consistent system of

electron, hole, and proton continuity equations, and (2) the application of a continuity equation-based

model for dispersive proton transport. Essential features of hydrogen-mediated interface trap

formation are demonstrated in a series of pulsed exposure/switched bias simulations.

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