A joint project of the Graduate School, Peabody College, and the Jean & Alexander Heard Library

Title page for ETD etd-12032012-190026


Type of Document Dissertation
Author Hughart, David Russell
URN etd-12032012-190026
Title Variations in Radiation Response Due to Hydrogen: Mechanisms of Interface Trap Buildup and Annealing
Degree PhD
Department Electrical Engineering
Advisory Committee
Advisor Name Title
Ronald D. Schrimpf Committee Chair
Daniel M. Fleetwood Committee Member
Kenneth F. Galloway Committee Member
Robert A. Reed Committee Member
Sokrates T. Pantelides Committee Member
Keywords
  • annealing
  • elevated temperature irradiation
  • low dose rate
  • hydrogen
  • interface traps
  • Radiation effects
Date of Defense 2012-11-26
Availability unrestricted
Abstract
Hydrogen produces variability in the radiation response of integrated circuits, whether incorporated in the oxide or present as a gas. The presence of molecular hydrogen can increase interface trap buildup and alter dose rate response. Defects with hydrogen incorporated in the oxide during processing can suppress interface trap buildup at elevated temperatures. This thesis explores the reactions of hydrogenous species at common oxide defects and the mechanisms that explain radiation-induced interface trap formation and annealing, focusing on the effects of temperature, molecular hydrogen concentration, and dose rate.

Density functional theory (DFT) calculations identify defects likely to be present in common thermal oxides and provide energy barriers for reactions at those defects. Proton release mechanisms and defect interactions under a variety of conditions are identified that provide insight into enhanced degradation in the presence of molecular hydrogen, irradiation at elevated temperatures, and dose rate effects. These mechanisms are implemented in a numerical model that simulates interface trap buildup in a 1-D slice of oxide and silicon using the estimates for defect concentrations and energy barriers from the DFT calculations. The results provide insight into which reactions have a significant impact on interface trap density under a variety of conditions; the predictions are compared to experimental data. The results demonstrate how proton loss reactions can limit the supply of protons at the interface and suppress interface trap buildup at elevated temperature.

Files
  Filename       Size       Approximate Download Time (Hours:Minutes:Seconds) 
 
 28.8 Modem   56K Modem   ISDN (64 Kb)   ISDN (128 Kb)   Higher-speed Access 
  Hughart_Dissertation.pdf 4.17 Mb 00:19:17 00:09:55 00:08:41 00:04:20 00:00:22

Browse All Available ETDs by ( Author | Department )

If you have more questions or technical problems, please Contact LITS.