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Title page for ETD etd-11192013-122835


Type of Document Master's Thesis
Author Diggins, Zachary John
Author's Email Address zdiggins@gmail.com
URN etd-11192013-122835
Title Using capacitance to radiation harden flip-flops at advanced technology nodes
Degree Master of Science
Department Electrical Engineering
Advisory Committee
Advisor Name Title
Dr. Bharat Bhuva Committee Chair
Dr. Arthur Witulski Committee Member
Keywords
  • cmos
  • radiation effects
  • single event upset
Date of Defense 2013-10-09
Availability unrestricted
Abstract
Capacitive radiation hardening by design (RHBD) techniques to reduce the single-event cross section of flip-flops are shown to be effective at highly scaled technology nodes, especially for the terrestrial environment. Test results for different values of RHBD capacitance for both 40 nm and 28 nm technology node designs show that small values of RHBD capacitance (<3 fF) are effective in reducing the single-event cross section for low LET particles, neutrons, and alpha

particles. Reductions of 4x, 2.5x, and 14x respectively were observed for the 28 nm designs for low LET particles, neutrons, and alpha particles, and reductions of 2.4x and 2.1x were observed for the 40 nm designs for low LET particles and alpha particles. Experimental pulse width measurement results for Xenon are used to highlight operating regions where capacitive RHBD

techniques are most effective. Additionally, the impact of beam energy on single-event error

rates for flip flop heavy-ion broad beam testing will be presented, as well as the design of a

fabricated 40 nm IC with test flip flop designs for gathering parametric data on hardening

techniques.

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