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Title page for ETD etd-11192008-010832


Type of Document Dissertation
Author Hutson, John
URN etd-11192008-010832
Title Single Event Latchup in a Deep Submicron CMOS Technology
Degree PhD
Department Electrical Engineering
Advisory Committee
Advisor Name Title
Ron Schrimpf Committee Chair
Lloyd Massengill Committee Member
Robert Reed Committee Member
Robert Weller Committee Member
Senta Greene Committee Member
Keywords
  • Single Event Latchup
  • Single Event Effects
  • Radiation Effects
  • Metal Oxide Semiconductors Complementary -- Effect of radiation on -- Testing
  • Radiation hardening -- Testing
Date of Defense 2008-10-31
Availability unrestricted
Abstract
Single event latchup (SEL) has been observed on a range of different devices over the past three decades and can result in large currents on metal interconnects, resulting in long-term device reliability issues or catastrophic failure. Because of this, it is important to thoroughly screen parts for SEL vulnerability. In this dissertation, both technology computer aided design (TCAD) simulations and experimental data provide support for a variation in device vulnerability based on the lateral orientation for grazing angle ion strikes. These results show industry standard tests for single event effects (SEEs) may be inadequate for device validation and characterization.
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