| Type of Document |
Dissertation |
| Author |
Hutson, John
|
| URN |
etd-11192008-010832 |
| Title |
Single Event Latchup in a Deep Submicron CMOS Technology |
| Degree |
PhD |
| Department |
Electrical Engineering |
| Advisory Committee |
| Advisor Name |
Title |
| Ron Schrimpf |
Committee Chair |
| Lloyd Massengill |
Committee Member |
| Robert Reed |
Committee Member |
| Robert Weller |
Committee Member |
| Senta Greene |
Committee Member |
|
| Keywords |
- Single Event Latchup
- Single Event Effects
- Radiation Effects
- Metal Oxide Semiconductors Complementary -- Effect of radiation on -- Testing
- Radiation hardening -- Testing
|
| Date of Defense |
2008-10-31 |
| Availability |
unrestricted |
Abstract
Single event latchup (SEL) has been observed on a range of different devices over the past three decades and can result in large currents on metal interconnects, resulting in long-term device reliability issues or catastrophic failure. Because of this, it is important to thoroughly screen parts for SEL vulnerability. In this dissertation, both technology computer aided design (TCAD) simulations and experimental data provide support for a variation in device vulnerability based on the lateral orientation for grazing angle ion strikes. These results show industry standard tests for single event effects (SEEs) may be inadequate for device validation and characterization.
|
| Files |
| Filename |
Size |
Approximate Download Time
(Hours:Minutes:Seconds)
|
| 28.8 Modem |
56K Modem |
ISDN (64 Kb) |
ISDN (128 Kb) |
Higher-speed Access |
| |
DISSERTATION_FINAL_DRAFT.pdf |
6.08 Mb |
00:28:10 |
00:14:29 |
00:12:40 |
00:06:20 |
00:00:32 |
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