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Title page for ETD etd-11172017-143451


Type of Document Master's Thesis
Author Wang, Pengfei
Author's Email Address william09925@gmail.com
URN etd-11172017-143451
Title X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices
Degree Master of Science
Department Electrical Engineering
Advisory Committee
Advisor Name Title
Robert A. Reed Committee Chair
Daniel M. Fleetwood Committee Member
Keywords
  • X-ray
  • total ionizing dose
  • proton
  • oxide breakdown
  • physically unclonable function
  • hardware security
Date of Defense 2017-11-15
Availability unrestricted
Abstract
Total ionizing dose effects are investigated on a physically unclonable function (PUF) based on CMOS breakdown. Devices irradiated to 2.0 Mrad(SiO2) show less than 11% change in current ratio at 1.2 V. The read-out window of programmed PUFs decreases significantly at high dose proton irradiation, and then recovers back to the original value after annealing. The proton test results for the pFET selector, the unbroken nFET, and the broken nFET indicate that the threshold voltage shift of the pFET selector contributes mainly to the degradation of the PUF.
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