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Title page for ETD etd-10202008-144701


Type of Document Dissertation
Author Pellish, Jonathan Allen
Author's Email Address jonathan.pellish@ieee.org
URN etd-10202008-144701
Title Bulk Silicon-Germanium Heterojunction Bipolar Transistor Process Feature Implications for Single-Event Effects Analysis and Charge Collection Mechanisms
Degree PhD
Department Electrical Engineering
Advisory Committee
Advisor Name Title
Robert A. Weller Committee Chair
Daniel M. Fleetwood Committee Member
Paul D. Sheldon Committee Member
Robert A. Reed Committee Member
Ronald D. Schrimpf Committee Member
Keywords
  • single event transient
  • single event effects
  • pulsed laser
  • microbeam
  • sige hbt
  • silicon germanium
  • Bipolar transistors -- Effect of radiation on -- Testing
  • Junction transistors -- Effect of radiation on -- Testing
  • Heavy ions
  • Space environment
  • Radiation hardening
Date of Defense 2008-09-26
Availability unrestricted
Abstract
Silicon-germanium heterojunction bipolar transistor (SiGe HBT) BiCMOS technology is recognized by the space electronics community for its potential to transform high-speed microelectronic applications by monolithic incorporation of low-power complementary metal oxide semiconductor logic with high-speed SiGe HBT building blocks. However, SiGe HBTs suffer from a low single-event upset threshold and a large saturated cross section, two traits that make them liabilities for use in space-base applications.

The deep trench isolation, n+ subcollector, and lightly-doped p-type substrate are the dominant SiGe HBT process features that influence single-event effects. These features control the single-event upset response as well as single-event current induction. This work presents a single-event rate prediction model for SiGe HBTs that takes these features into account as well as the first complete collection of measured wide bandwidth single-event current transients, including pulsed laser, heavy ion microbeam, and heavy ion broadbeam radiation sources. These transient data confirm important single-event upset mechanisms and provide a calibration baseline for future transient experiments and simulations.

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