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Title page for ETD etd-09012017-135035


Type of Document Master's Thesis
Author Zhao, Simeng
Author's Email Address ellen.simengzhao@gmail.com
URN etd-09012017-135035
Title Capacitance-frequency Estimates of Border-trap Densities in Multi-fin MOS Capacitors
Degree Master of Science
Department Electrical Engineering
Advisory Committee
Advisor Name Title
Daniel Fleetwood Committee Chair
En Xia Zhang Committee Co-Chair
Keywords
  • capacitance-voltage
  • capacitance-frequency
  • FinFETs
  • interface traps
  • MOS
  • Border traps
  • radiation effects
Date of Defense 2017-08-31
Availability unrestricted
Abstract
This thesis focuses on radiation effects of multi-fin MOS capacitors with high-K dielectrics built in Ge and InGaAs FinFET technologies. Capacitance-frequency (C-f) measurements are applied to provide lower-bound estimates of border-trap densities in these devices before and after X-ray irradiation. The method is illustrated for SiO2-based planar MOS capacitors, and compared with high-frequency capacitance-voltage (C-V) measurements. Lower border-trap densities are found before and after irradiation for multi-fin capacitors built in a strained Ge pMOS FinFET technology than for similar devices built using an early-developmental stage InGaAs MOS technology. These results show the utility of C-f measurements in characterizing defect densities in MOS capacitors, particularly when large border-trap densities exist.

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