A joint project of the Graduate School, Peabody College, and the Jean & Alexander Heard Library

Title page for ETD etd-08012008-082330


Type of Document Master's Thesis
Author Sanathanamurthy, Siddartha
URN etd-08012008-082330
Title Simulated temperature dependency of SEU sensitivity in a 0.5 μm CMOS SRAM
Degree Master of Science
Department Electrical Engineering
Advisory Committee
Advisor Name Title
Dr. Michael L. Alles Committee Member
Dr. Robert A. Reed Committee Member
Keywords
  • Bipolar integrated circuits -- Computer-aided design
  • Random access memory -- Testing
  • SRAM
  • SEU
  • Cold Temperature
  • Germanium compounds -- Effect of radiation on
Date of Defense 2008-07-28
Availability unrestricted
Abstract
Application of advanced technology in remote, extreme environments can reduce system power, reduce launch weight and improve the overall reliability of the space mission. The Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) has been shown to have high tolerances to total ionizing dose. Furthermore, SiGe BiCMOS, a process technology implementing both SiGe HBT and Complimentary Metal Oxide Semiconductors (CMOS), has been shown to have the necessary performance to operate at cold temperatures. These features of this technology are essential in order to work in the above extreme environments. However, further study is needed to understand how BiCMOS reacts to Single Event Effects (SEE). The focus of this research is to study the CMOS portion of the BiCMOS process implemented as a Static Random Access Memory (SRAM) cell. By simulating an SRAM cell with Technology Computer Aided Design (TCAD) using a newly developed mixed-mode capability, this research shows that the digital CMOS SRAM cell has an increased sensitivity to Single Event Upsets (SEUs) at reduced temperatures driven by increased charge collection due to an increase in carrier mobilities. However, this increased sensitivity is still below the thresholds required to cause problems for the error management system for the memory cell and therefore radiation hardening will not be required for the SRAM at the cell level.
Files
  Filename       Size       Approximate Download Time (Hours:Minutes:Seconds) 
 
 28.8 Modem   56K Modem   ISDN (64 Kb)   ISDN (128 Kb)   Higher-speed Access 
  Sanathanamurthy_MS_Thesis.pdf 3.35 Mb 00:15:30 00:07:58 00:06:58 00:03:29 00:00:17

Browse All Available ETDs by ( Author | Department )

If you have more questions or technical problems, please Contact LITS.