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Title page for ETD etd-07312014-201221


Type of Document Dissertation
Author Chatterjee, Indranil
Author's Email Address indranil.chatterjee@vanderbilt.edu
URN etd-07312014-201221
Title Geometric Dependence of the Total Ionizing Dose Response of FinFETs
Degree PhD
Department Electrical Engineering
Advisory Committee
Advisor Name Title
Bharat L. Bhuva Committee Chair
Daniel M. Fleetwood Committee Co-Chair
Aniruddha S. Gokhale Committee Member
Balaji Narasimham Committee Member
Michael L. Alles Committee Member
Ronald D. Schrimpf Committee Member
ShiJie Wen Committee Member
Keywords
  • Total dose effects
  • Isolation oxides
  • Bulk FinFET
  • SOI FinFET
  • Parasitic transistor
  • Oxide traps
  • Charge trapping
Date of Defense 2014-07-24
Availability unrestricted
Abstract
The total ionizing dose induced degradation in advanced deep-submicron CMOS technologies has been significantly reduced by scaling. Damage to isolating field oxides remains a significant threat for integrated circuits fabricated in these technologies that must operate in harsh radiation environments. This work investigates the effects of geometry on the total ionizing dose response of bulk and Silicon-on-Insulator (SOI) FinFETs. Experimental and TCAD simulations show that the post-irradiation response of bulk FinFETs is dominated by buildup of charge in the shallow trench isolation oxide which induces a parasitic leakage current path, whereas in SOI FinFETs, charge trapping in Buried Oxide (BOX) usually is the primary contributing factor to device degradation in a radiation environment. For bulk FinFETs, the radiation-induced degradation increases with decreasing fin-width, increases with decreasing channel length, and increases with increasing fin-to-fin separation.
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