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Title page for ETD etd-07092012-155625

Type of Document Dissertation
Author El Mamouni, Farah
Author's Email Address farah.el.mamouni@vanderbilt.edu
URN etd-07092012-155625
Title Single-event-transient effects in sub-70 nm bulk and SOI FinFETs
Degree PhD
Department Electrical Engineering
Advisory Committee
Advisor Name Title
Ronald D. Schrimpf Committee Chair
Daniel M. Fleetwood Committee Member
Michael L Alles Committee Member
Robert A. Reed Committee Member
Sokrates Pantelides Committee Member
  • single event effects.
  • electronic devices
  • Radiation effects
Date of Defense 2012-06-22
Availability unrestricted
In this thesis, single event transient (SET) effects in sub-70 nm bulk and SOI FinFETs are investigated through topside and backside laser and heavy ion irradiations. Pulsed laser induced current transients in bulk FinFETs show distinct signatures for charge collection from drift and diffusion, demonstrating the contribution of charge generated in the substrate to the charge collection process. This result was validated through heavy ion testing on advanced bulk FinFETs with two different junction contact schemes (dumbbell and saddle). The drain region dominates the charge collection response of bulk FinFETs, with the maximum charge collected in devices with dumbbell contacts. Recorded current transients in the drain and source terminals of bulk and SOI FinFETs indicated that shunt effect plays a key role in the charge collection process of these highly scaled structure. Top-side laser and heavy ion results on bulk and SOI FinFETs demonstrate a significantly higher tolerance of SOI devices to SEEs, thanks to the buried oxide (BOX) layer that reduces their collection volume to the fins.
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