| Type of Document |
Dissertation |
| Author |
Ahlbin, Jonathan Ragnar
|
| Author's Email Address |
jon.ahlbin@vanderbilt.edu |
| URN |
etd-04012012-154436 |
| Title |
CHARACTERIZATION OF THE MECHANISMS AFFECTING SINGLE-EVENT TRANSIENTS IN SUB-100 NM TECHNOLOGIES |
| Degree |
PhD |
| Department |
Electrical Engineering |
| Advisory Committee |
| Advisor Name |
Title |
| Prof. Lloyd Massengill |
Committee Chair |
| Dr. Stephen Buchner |
Committee Member |
| Prof. Arthur Witulski |
Committee Member |
| Prof. Bharat Bhuva |
Committee Member |
| Prof. Robert Reed |
Committee Member |
|
| Keywords |
- digital circuit
- single-event transient
- single-event
- radiation effects
- semiconductor reliability
- pulse quenching
- charge sharing
- CMOS reliability
|
| Date of Defense |
2012-02-24 |
| Availability |
unrestricted |
Abstract
As transistor density increases with each new CMOS technology node, the probability of a single ion causing a single-event transient in a circuit or inducing charge sharing among transistors increases. These transients can lead to single-event upsets that can cause a circuit or system to fail. Therefore, it is important to understand the characteristics of single-event transients at each new technology node and the resulting impacts on circuit designs.
This dissertation uses both three-dimensional mixed-mode technology-computer-aided design simulations and experimental analysis at the 65 nm, 90 nm, and 130 nm technology nodes to fully characterize the mechanisms that affect single-event transients in sub-100 nm bulk CMOS technologies. Investigations show that the design parameter of n-well contact area influences the pulse width of single-event transients by controlling the degree of parasitic bipolar junction transistor amplification in pMOS transistors. Also the prevalence of charge sharing in sub-100 nm bulk CMO technologies has led to a new single-event mechanism called pulse quenching that can shorten or eliminate single-event transients. Furthermore, pulse quenching can lead to a new type of single-event transient called a double-pulse-single-event transient.
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| Files |
| Filename |
Size |
Approximate Download Time
(Hours:Minutes:Seconds)
|
| 28.8 Modem |
56K Modem |
ISDN (64 Kb) |
ISDN (128 Kb) |
Higher-speed Access |
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Ahlbin_Dissertation_vElecFinal.pdf |
4.31 Mb |
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