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Title page for ETD etd-03312008-170923


Type of Document Dissertation
Author Dixit, Sriram Kannan
Author's Email Address sriramdixit@gmail.com
URN etd-03312008-170923
Title Radiation-induced charge trapping studies of advanced Si and SiC based MOS devices
Degree PhD
Department Interdisciplinary Materials Science
Advisory Committee
Advisor Name Title
Leonard C. Feldman Committee Chair
Daniel M. Fleetwood Committee Member
Greg Walker Committee Member
Norman H. Tolk Committee Member
Ronald D. Schrimpf Committee Member
Sokrates T. Pantelides Committee Member
Keywords
  • Metal oxide semiconductors -- Effect of radiation on
  • Radiation hardening
  • voltage shifts
  • NO anneal
  • wide band gap semiconductor
  • charge trapping
  • Radiation damage
  • Silicon carbide
  • Hafnium oxide
  • reliability
  • total dose
  • alternative high-k dielectrics
Date of Defense 2008-03-24
Availability unrestricted
Abstract
This dissertation presents the radiation-induced charge trapping studies of upcoming material systems of Si and SiC for future low power and high power technologies. HfO2/Si with metal gates has already been announced as the material system that will power the future technology scaling for low power devices. SiO2/SiC based devices are possible candidates for the upcoming high power device technologies. This dissertation provides significant insights into the charge trapping characteristics in these devices exposed to high-energy ionizing radiation. Charge trapping is studied as a function of dose, processing and gate oxide fields with extensive materials characterization performed before irradiations. The results provide additional information for establishing reliable design rules for future MOS devices intended for both, high and low operating voltage when exposed to a radiation environment.
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