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Title page for ETD etd-01022009-113051


Type of Document Dissertation
Author Vora, Nirav Dineshkumar
Author's Email Address nirav.vora@vanderbilt.edu
URN etd-01022009-113051
Title High temperature oxidation of silica formers in dissociated oxygen
Degree PhD
Department Chemical Engineering
Advisory Committee
Advisor Name Title
Dr. Bridget R. Rogers Committee Chair
Dr. D. Greg Walker Committee Member
Dr. Kane Jennings Committee Member
Dr. Ken A. Debelak Committee Member
Dr. M. Douglas LeVan Committee Member
Keywords
  • oxygen plasma afterglow
  • high temperature
  • oxidation of silicon
  • finite element model
  • parallel oxidation model
  • reactive compressible flow
  • Silicon compounds -- Oxidation
  • Heat resistant materials
  • Space vehicles -- Materials
Date of Defense 2008-10-31
Availability unrestricted
Abstract
A study of the high temperature oxidation of silica formers in dissociated oxygen is presented in this dissertation. Flowing an O2/Ar gas mixture through a microwave discharge before it entered a flow reactor generated the partially dissociated oxygen environment. The samples were oxidized at high temperatures (1183 K – 1323 K) and low pressures (3 Torr – 4 Torr). The O atom concentration near the sample surface, determined using a semi-empirical reactor model, was used to define the quantitative role of O atoms in the oxidation mechanism. The continuous, non-isothermal, compressible, laminar flow, coupled with high-temperature oxygen plasma afterglow chemistry model was solved using the finite element method. Modeling of the silicon, Si3N4, and SiC oxidation mechanisms showed that the O atom is the dominant oxidizing species, with O2 having a negligible effect.
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